Method of fabricating interconnect lines and plate electrodes of a storage capacitor in a semiconductor device,申请号US09/229336-传众专利搜索

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发明名称	Method of fabricating interconnect lines and plate electrodes of a storage capacitor in a semiconductor device
摘要
申请公布号	US6184075(B2)	申请公布日期	2001.02.06
申请号	US09/229336	申请日期	1999.01.13
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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