| 摘要 |
A memory device, and a method for manufacturing same, comprises a semiconductor layer having a first surface and a second surface, and further having a trench therein. The memory device further comprises a transistor source within the first surface of the semiconductor layer, the source having a lower surface, wherein a bottom of the trench extends below the lower surface of the source. A transistor drain within the second surface of the semiconductor layer comprises a lower surface with the trench bottom extending below the lower surface of the drain and wherein the trench separates the source and drain. The memory device further comprises a transistor channel along at least the bottom of the trench, a floating gate at least partially within the trench, and a control gate overlying the floating gate.
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