| 摘要 |
PURPOSE: A method for manufacturing a contact of a semiconductor device is provided to easily performing a contact process, by forming a pillar in a contact portion to guarantee a contact area, by using a self-align method to form a contact hole and by forming a contact pad filling the contact hole. CONSTITUTION: A gate insulation layer is formed on a semiconductor substrate, and a gate electrode is formed on the gate insulation layer. A mask insulation layer pattern is formed on the surface, and an insulation layer spacer is formed on the sidewall of the gate electrode and the mask insulation layer pattern. The first interlayer dielectric and a sacrificial conductive layer are sequentially formed, and the sacrificial conductive layer is etched to form a sacrificial conductive layer pattern by using the first contact mask for protecting a portion for a contact as an etch mask. The second interlayer dielectric(33) and a planarization insulation layer(35) are sequentially formed, and are etched for planarization to expose the sacrificial conductive layer pattern. The sacrificial conductive layer pattern and the first interlayer dielectric are removed to form a contact hole exposing a portion for the contact. A contact pad filling the contact hole is formed. The third interlayer dielectric(41) having an etch selectivity difference regarding the second interlayer dielectric is formed. The third interlayer dielectric and the planarization insulation layer are etched to expose the contact pad by using the second contact mask exposing a portion for the contact as an etch mask.
|
