Integrated semiconductor optic sensor device and corresponding manufacturing process

摘要

The invention relates to a process for manufacturing a light sensor device in a standard CMOS process, including at least the following phases: implanting active areas on a semiconductor substrate to obtain at least a first integrated region of a corresponding photosensor; forming at least a stack of layers having different thickness and refractive index layers over the photosensor to provide interferential filters for the same photosensor. At least one of the above mentioned layers is formed by a trasparent metallic oxide having a high refraction index and a corresponding high dielectric constant. <??>In this manner, the design of interferential resonators is rendered more flexible making possible the use of a stack of layers including more than one high refraction index layer. <IMAGE>