| 摘要 |
Methods of forming semiconductor devices and the devices so formed include forming an oxidation barrier pattern to cover sidewalls of a metal-containing pattern. The metal-containing pattern is located on a gate polysilicon layer and includes a metal silicide pattern, a metal barrier pattern and a gate metal pattern which are sequentially stacked. An oxide layer is not formed between the metal barrier pattern and the gate polysilicon pattern. Furthermore, a metal silicide pattern located between the metal barrier pattern and the gate polysilicon pattern functions not only as an ohmic layer decreasing a contact resistance between the metal barrier pattern and the gate polysilicon pattern but also as an oxidation barrier to prevent a metal such as tungsten from being oxidized. Therefore, semiconductor devices have improved operational speed and/or reliability.
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