发明名称 |
Method for etching |
摘要 |
Masked tin oxide films are etched with an etchant composed of a zinc metal, an acid and a Ni++ penetration control agent. The exposed metal oxide film is reduced to metallic tin by the action of active hydrogen (H0) produced in the reaction of zinc with acid, and etching stops when the metallic tin becomes impenetrable to H0.
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申请公布号 |
US6180021(B1) |
申请公布日期 |
2001.01.30 |
申请号 |
US19990421232 |
申请日期 |
1999.10.20 |
申请人 |
FELDMAN TECHNOLOGY CORPORATION |
发明人 |
MCLEAN DOUGLAS;FELDMAN BERNARD |
分类号 |
C23F1/16;C03C17/23;C03C17/34;C04B41/53;C09K13/04;H01L31/18;(IPC1-7):C23F1/16 |
主分类号 |
C23F1/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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