| 摘要 |
PROBLEM TO BE SOLVED: To suppress emission of global warming gases in a dry etching process. SOLUTION: In this semiconductor device, a solid 211 containing fluorine element and carbon element as main components is excited to generate a fluorocarbon gas in a region, separate from a reaction chamber housing a substrate 201 to be treated. The fluorocarbon gas is decomposed into F, CO, CO2, COF, COF2 and so forth by a plasma 210 of a gas containing am oxygen element, generated between the solid excited region and the reaction chamber and introduced into a treatment vessel 202.
|
