发明名称 SEMICONDUCTOR DEVICE DRIVE CIRCUIT
摘要 PROBLEM TO BE SOLVED: To reduce losses generated in a switch for an on gate by reducing a gate current value by an on gate signal, while current flowing to a GTO(gate turn-off thyristor) circuit flows in a negative direction. SOLUTION: A 1st bypass resistance 43 is connected in parallel with the switch 12a for an on gate of a wide on gate signal generation circuit 10. When an inter-gate-cathode voltage level discrimination circuit 41 discriminating the inter-gate-cathode voltage level of a GTO 7 discriminates that current flows to a diode 8 connected in opposite parallel manner to the GTP with a wide on gate command signal on, a 1st AND circuit 42 having an AND function, whose output becomes a signal making the wide on gate signal generation circuit off controls a switch for an on gate.
申请公布号 JP2001028534(A) 申请公布日期 2001.01.30
申请号 JP19990200543 申请日期 1999.07.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKAO KENJI;MIZOHATA FUMIO;WATANABE KIYOBUMI
分类号 H03K17/725;(IPC1-7):H03K17/725 主分类号 H03K17/725
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