| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetron sputtering device for forming a multilayer film simultaneously capable of improving production efficiency and the quality of the film, miniaturizing the device, reducing cost and improving maintainability. SOLUTION: Two targets 14 and 15 are set to the inside of a process chamber 2, voltage for sputtering is made selectively applicable from a cathode electrode 11 common to both, and moreover, a substrate 17 introduced into the process chamber 2 via a load lock chamber 3 is made capable of being carried to the respectively confronted film forming positions of the targets 14 and 15. At first, the substrate 17 is carried to the film forming position confronted with the target 14 to generate plasma, furthermore, a magnetic field generating means provided in the cathode electrode 11 is reciprocated on the rear side of the target 14 to execute the formation of a film of the 1st layer, next, the substrate 17 is carried toward the target 15, and the magnetic field generating means is reciprocated on the rear side of the target 15 to execute the formation of a film of the 2nd layer.
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