Semiconductor having low concentration of phosphorous

摘要

A non-single-crystalline semiconductor material and a device utilizing the material, the material being of an intrinsic or substantially intrinsic conductivity type and including silicon and containing a dangling bond neutralizer consisting of hydrogen and/or a halogven wherein the concentration of carbon contained in the semiconductor material is less than 4x1018 and the concentration of boron contained in the semiconductor material is not higher than 2x1017 atoms/cm3.