| 摘要 |
PROBLEM TO BE SOLVED: To provide a projection aligner which easily provides spherical aberration for optimum transfer-exposure according to pattern line widths and kinds of resists. SOLUTION: Illumination optical systems 1 and 2 for illuminating a mask 3 comprising a prescribed pattern, and a projection optical system 4 for projecting a pattern on the mask to a prescribed region of a substrate 6 where a photosensitized member is coated, are provided. Here, based on at least either the illumination condition information for mask or kind information for photosensitized member, an aberration variable part 40, which at least locally changes the spherical aberration of the imaging plane of a pattern image in a specified region is provided.
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