发明名称 Method and apparatus for improved control of process and purge material in substrate processing system
摘要 A method and apparatus for control of precursor and purge additive materials in a deposition system comprising a precursor material delivery system and a plurality of purge additive transfer lines connected between or at components in the precursor material delivery system. One of the plurality of purge additive transfer lines is connected between an ampoule and a liquid mass flow controller, another is connected between the liquid mass flow controller and a vaporizer and a third is connected to the vaporizer. The apparatus further comprises a process chamber connected to the precursor material delivery system and having a susceptor wherein one of the plurality of purge additive transfer lines is connected to the susceptor. With the apparatus and accompanying method, formation of particulate contaminants is greatly reduced. The purge additive provided at strategic locations within the deposition system provides a stabilizing effect to any precursor that remains in the transfer lines and helps to control the CVD reaction at the exclusion zone.
申请公布号 US6179925(B1) 申请公布日期 2001.01.30
申请号 US19990311449 申请日期 1999.05.14
申请人 APPLIED MATERIALS, INC. 发明人 SCHMITT JOHN;ZHENG BO;CHANG MEI;VOSS STEPHEN
分类号 C23C16/455;C23C16/448;C23C16/52;H01L21/20;H01L21/28;H01L21/285;(IPC1-7):C23C16/00 主分类号 C23C16/455
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