| 摘要 |
PROBLEM TO BE SOLVED: To improve deposition rate of doped Si by setting a simple substrate in a chamber, adjusting the wafer temp. for a desired deposition temp., feeding a deposition gas at a desired pressure for a desired time into the chamber and depositing the doped Si to a desired thickness. SOLUTION: A single substrate such as wafer 35 is mounted on a pedestal in a reaction chamber 30 and heated with lights from high-intensity lamps 38, 39 to heat and adjust for desired deposition temp. of the wafer 35, and a deposition gas is made to flow at a desired pressure for a desired time interval, from a gas inlet port 310 of the reaction chamber 30 across the wafer 35 to an exhaust port 311 so as to deposit a P-doped polycrystalline Si at a desired thickness on the wafer 35. Thus, the deposition rate of the P-doped polycrystalline Si can be improved. |
