| 摘要 |
PROBLEM TO BE SOLVED: To prolong the operation life of a memory cell in a nonvolatile semiconductor storage device. SOLUTION: This semiconductor storage device is constituted into a structure, where a barrier film 20 consisting of an SiON(silicon oxynitride) film is made to be interposed between films 19A and 9 under the lower surface of an interlayer insulating film which covers floating gates 4, control gates 6 and the like and is a single layer film consisting of a TEOS(tetraethyl orthosilicate) film, an SOG(spin-on-glass) film or the like or a laminated film formed by laminating a TEOS film, an SOG film and the like, and moreover the barrier properties of the SiON film are raised by making the SiON film, which is inferior to an oxide film in a coverage, cover with the oxide film, which is satisfactory in coverage in comparison with this SiON film and is formed through a plasma CVD method, and even if hydrogen, hydrogen atoms and the like, which are contained in the TEOS film, the SOG film and the like, which constitute the interlayer insulating film are diffused, the hydrogen, the hydrogen atoms and the like being trapped in a tunnel oxide film 3 is inhibited, modification of the trap-up rate of the hydrogen, the hydrogen atoms and the like is contrived, the endurance characteristics of the hydrogen, the hydrogen atoms and the like are enhanced and the prolongation of the operating life of a memory cell is realized.
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