Metal oxide semiconductor device with localized laterally doped channel

摘要

Channel doping is implemented such that dopants remain localized under the gate without migrating under the source/drain juctions during processing, thereby avoiding performance degradation of the finished device. Embodiments include implanting impurities at an acute angle to form a lateral channel implant localized below the gate after activation of source/drain regions, and activating the lateral channel implant by a low-temperature RTA during subsequent metal silicide formation. The use of a low-temperature RTA for electrical activation of the lateral channel implant avoids impurity migration under the source/drain junctions, thereby lowering parasitic junction capacitance and enabling the manufacture of semiconductor devices exhibiting higher circuit speeds with improved threshold voltage control.