ACTIVE TYPE IGBT(INSULATED GATE BIPOLAR TRANSISTOR) DEVICE SERIAL DRIVING CIRCUIT AND DRIVING METHOD THEREOF

摘要

PURPOSE: An active type IGBT(Insulated Gate Bipolar Transistor) device serial driving circuit and a driving method thereof are provided, which reduces a system power loss and an installation area by preventing a damage and a mis-operation of the device generated by applying a voltage higher than an allowed level as to each IGBT device. CONSTITUTION: A power device voltage detection part(1) includes a snubber circuit to absorb a surge voltage applied to a device and a voltage feedback loop, and an overvoltage control part(2) establishes a reference voltage for comparison with a voltage applied to a power device. A current controlled signal generation part(3) generates a driving current control signal of the power device in one control period by comparing the established reference voltage with a feedback voltage from the power device detection part and by judging whether a voltage applied to the power device is an overvoltage or not. A voltage limiter(4) establishes a voltage limit value of a driving signal according to the comparison result of the reference voltage and the feedback voltage. And gate drivers(5) convert the controlled driving current input signal into a voltage signal for driving and controlling an actual power device. The power device voltage detection part includes a switching device limiting a reverse flow of a current in the overvoltage control part.