发明名称 |
PREPARATION OF SILICON SUBSTRATE |
摘要 |
A silicon substrate is prepared by furnishing a silicon substrate (10) having a step (11) of at least 5 .mu.m high on one surface, forming by high pressure heat oxidation an oxide film (12) which is thinner than the step, and removing the oxide film on the higher surface region until the silicon surface is exposed in the higher surface region while leaving the oxide film on the lower surface region. Because of excellent electrical properties, minimized warpage, a substantially constant oxygen concentration, and a definitely ascertainable oxide-silicon boundary, the silicon substrate is suitable for use in optical waveguide devices.
|
申请公布号 |
CA2314696(A1) |
申请公布日期 |
2001.01.28 |
申请号 |
CA20002314696 |
申请日期 |
2000.07.27 |
申请人 |
NTT ELECTRONICS CORPORATION;SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
MAKIKAWA, SHINJI;HORIGUCHI, MASAHARU;EJIMA, SEIKI;MAEDA, YASUSHI |
分类号 |
G02B6/12;G02B6/13;(IPC1-7):C30B33/02;G02B6/122;H01L21/00;H01L21/461 |
主分类号 |
G02B6/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|