| 摘要 |
PURPOSE: A light absorbing composition for the application as antireflection covering composition which is useful when deep UV use is contained, especially a flattened covering layer is required. CONSTITUTION: When a photoresist relief image is formed on a substrate having a topography, (a) a layer of antireflection composition containing polymer having molecular weight of at most about 8,000 is applied on the substrate, (b) the layer of a photoresist composition is applied on the antireflection composition layer, and (c) the photoresist layer is exposed to activated radiant rays, and the exposed photoresist layer is developed.
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