发明名称 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To obtain a composition for an underlayer film of a resist excellent in adhesion to the resist and resistance to a developing solution and less liable to reduce film thickness in the oxygen ashing of the resist. SOLUTION: The composition contains (A) a hydrolyzate and/or a condensation product of a compound of the formula R1aSi(OR2)4-a [where R1 is H, F or a monovalent organic group, R2 is a monovalent organic group and (a) is 0-2] or the formula R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c [where R3-R6 are each a monovalent organic group, (b) and (c) are each 0-2, R7 is 0 or -(CH2)n-, (d) is 0 or 1 and (n) is 1-6], (B) a solvent of the formula R8O(CHCH3CH2O)cR9 [where R8 and R9 are each H, 1-4C alkyl or CH3CO- and (e) is 1-2] and (C) a compound which generates an acid when irradiated with light and/or heated.
申请公布号 JP2001022083(A) 申请公布日期 2001.01.26
申请号 JP19990197302 申请日期 1999.07.12
申请人 JSR CORP 发明人 NISHIKAWA MICHINORI;SUGITA HIKARI;KAWABE KENICHI;YAMADA KINJI;SAITO AKIO;OTA YOSHIHISA
分类号 H01L21/027;G03F7/004;G03F7/075;G03F7/11 主分类号 H01L21/027
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