FLASH MEMORY DEVICE HAVING STATE-READ OPERATION

摘要

PURPOSE: A flash memory device is provided to reduce unnecessary power noises and consumption during a state-read operation. CONSTITUTION: A flash memory device includes a memory cell array, data input/output pins, the first data-output circuit(200) and the second data-output circuit. Data information is stored in the memory cell array. The data input/output pins are divided into two groups. State data signals of state-read operation are outputted from the data input/output pins of the first group(DQ2/DQ6). The first data-output circuit(200) are connected to the data input/output pins of the first group(DQ2/DQ6). The first data-output circuit(200) outputs a data-state signal which toggles during a state-read operation. The data-state signal is generated in (N-1)th cycle and outputted in Nth cycle from at least a pin of the data input/output pins of the first group(DQ2/DQ6). Within the state-read operation, the second data-output circuit conserves a state of the data input/output pins of the second group.