发明名称 INTERNAL MATCHING TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To prevent low frequency oscillation during operation in high frequency band by providing a stabilization circuit comprising a resistor grounded through a resistor to avoid oscillation in the vicinity of a semiconductor element in a package. SOLUTION: The internal matching transistor 1 comprises semiconductor elements 2a-2d, input impedance matching circuits 3a-3d, output impedance matching circuits 4a-4d, and stabilization circuits 5a-5d. Since the impedance in the low frequency band is approximate to the impedance in the high frequency band in the vicinity of the semiconductor elements 2a-2d, corresponding anti-oscillation stabilization circuits 5a-5d are formed, respectively, in the vicinity of field effect transistors 2a-2d and field-effect transistors 2a-2d in same package. Since gain in the low frequency band is lowered by suppressing the influence of gain drop in the fundamental frequency band, low frequency oscillation can be suppressed. Furthermore, anti-oscillation countermeasure is not required outside the package.
申请公布号 JP2001024148(A) 申请公布日期 2001.01.26
申请号 JP19990193062 申请日期 1999.07.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 GOTO KIYOTAKE;INOUE AKIRA
分类号 H01L25/00;H01L21/338;H01L23/66;H01L25/04;H01L25/18;H01L29/812;H03F3/60 主分类号 H01L25/00
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