MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can exert suppression effect of short-channel effect without reducing the operation speed even when the pitch between gate electrodes is reduced as the device is miniaturized. SOLUTION: A gate insulating film 203 and a gate electrode lower layer 207 of polysilicon film are formed on a p-type semiconductor substrate 201. N-type impurities 208 are ion implanted for forming extension source-drain areas 209. P-type impurities 210 are ion implanted with a large inclination angle of 25 deg. for forming pocket areas 211. After forming side walls 212, source- drain areas 214 are formed and heat treated. After depositing an interlayer insulating film 215 on the whole surface, an opening is made on the gate electrode lower layer 207. By depositing high melting point metal on the whole surface and polishing it until the interlayer insulating film 215 is exposed, gate electrode upper layers 218 are formed of high melting point metal film.