| 摘要 |
PURPOSE: A semiconductor light emitting device is provided to easily control a III-V compound semiconductor laser in a lateral mode, improve the aspect ration of a laser beam, and reduce damages by the growth and patterning of an AlN layer. CONSTITUTION: A lateral mode control layer(13) or (7) of AlN with a thickness of 0-300 nm is provided either of between N-type clad layers(12,14) or between P-type clad layers(6,8), or between one of the above clad layers and an active layer. A mask layer is formed on a substrate, an AlN layer is formed to cover the mask layer, and the AlN layer is lifted off by the use of a solution that is capable of etching the mask layer.
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