发明名称 |
ELECTRO-OPTICAL DEVICE AND ELECTRONIC EQUIPMENT |
摘要 |
PURPOSE: An electro-optical device is provided to obtain a high operation performance and a high reliability through a TFT structure for a driving circuit, a pixel section and a memory section formed on a same substrate. CONSTITUTION: Provided are an electro-optical device and an electronic equipment which include the electro-optical device. A TFT structure that is strong against hot carrier injection is realized by placing an LDD region which overlaps a gate electrode in an n-channel TFT forming a driver circuit. Furthermore, the TFT structure having a low off current value is realized by placing LDD regions which do not overlap a gate electrode in a pixel TFT forming a pixel section. In addition, the electro-optical device has a memory section on the same insulator, the memory section having a memory transistor and storing data. |
申请公布号 |
KR20010006985(A) |
申请公布日期 |
2001.01.26 |
申请号 |
KR20000019772 |
申请日期 |
2000.04.15 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY K.K. |
发明人 |
KITAKADO HIDEHITO;FUKUNAGA TAKESHI;YAMAZAKI SHUNPEI |
分类号 |
G02F1/1362;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/04;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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