发明名称 ELECTRO-OPTICAL DEVICE AND ELECTRONIC EQUIPMENT
摘要 PURPOSE: An electro-optical device is provided to obtain a high operation performance and a high reliability through a TFT structure for a driving circuit, a pixel section and a memory section formed on a same substrate. CONSTITUTION: Provided are an electro-optical device and an electronic equipment which include the electro-optical device. A TFT structure that is strong against hot carrier injection is realized by placing an LDD region which overlaps a gate electrode in an n-channel TFT forming a driver circuit. Furthermore, the TFT structure having a low off current value is realized by placing LDD regions which do not overlap a gate electrode in a pixel TFT forming a pixel section. In addition, the electro-optical device has a memory section on the same insulator, the memory section having a memory transistor and storing data.
申请公布号 KR20010006985(A) 申请公布日期 2001.01.26
申请号 KR20000019772 申请日期 2000.04.15
申请人 SEMICONDUCTOR ENERGY LABORATORY K.K. 发明人 KITAKADO HIDEHITO;FUKUNAGA TAKESHI;YAMAZAKI SHUNPEI
分类号 G02F1/1362;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/04;H01L29/786;(IPC1-7):H01L29/786 主分类号 G02F1/1362
代理机构 代理人
主权项
地址