发明名称 |
MANUFACTURE FOR OPTOELECTRONIC DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a technology in which the manufacturing cost for an optoelectronic device is reduced. SOLUTION: The manufacturing cost is reduced by reducing a required number of patterning as much as possible by a manufacturing method for a TFT which forms an optoelectronic device. Specifically, impurity elements are added into an active layer by using a gate wiring as a mask. After that, a member which is able to become a mask is formed on the side wall of the gate wiring while adding the impurities without a patterning step, and the impurity elements are added again. By the means an LDD region can be formed without increasing the patterning number.</p> |
申请公布号 |
JP2001024197(A) |
申请公布日期 |
2001.01.26 |
申请号 |
JP19990191081 |
申请日期 |
1999.07.05 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
FUJIMOTO ETSUKO;SAKAKURA MASAYUKI;KITAKADO HIDETO;TANAKA NOBUHIRO |
分类号 |
G09F9/30;G02F1/136;G02F1/1365;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
G09F9/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|