发明名称 MANUFACTURE FOR OPTOELECTRONIC DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a technology in which the manufacturing cost for an optoelectronic device is reduced. SOLUTION: The manufacturing cost is reduced by reducing a required number of patterning as much as possible by a manufacturing method for a TFT which forms an optoelectronic device. Specifically, impurity elements are added into an active layer by using a gate wiring as a mask. After that, a member which is able to become a mask is formed on the side wall of the gate wiring while adding the impurities without a patterning step, and the impurity elements are added again. By the means an LDD region can be formed without increasing the patterning number.</p>
申请公布号 JP2001024197(A) 申请公布日期 2001.01.26
申请号 JP19990191081 申请日期 1999.07.05
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 FUJIMOTO ETSUKO;SAKAKURA MASAYUKI;KITAKADO HIDETO;TANAKA NOBUHIRO
分类号 G09F9/30;G02F1/136;G02F1/1365;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):H01L29/786 主分类号 G09F9/30
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