ONE KIND OF LOW VOLTAGE OPERATION AND NONVOLATILE FERROELECTRIC MEMORY HAVING FLOATING GATE

摘要

PROBLEM TO BE SOLVED: To enable operation and fast read/write at a low voltage by providing a metallic thin film of source/drain on an interface substrate of a homogeneous compound and different size, bringing it into contact with a ferroelectric thin film, and providing a substrate metallic thin film to a bow of a homogeneous compound and different size. SOLUTION: A source metallic thin film and a drain metallic thin film wherein a material of aluminum is used are formed on an interface substrate of homogeneous compound and different size of a silicon substrate having a p-n interface and the metallic thin films are brought into contact with both sides of a ferroelectric thin film 4 of titanate. A metallic thin film of a substrate 6 is deposited on a bow of the interface substrate of compound and a homogeneous different size. As a result, it is possible to reduce the thickness of the ferroelectric thin film 4 greatly to 550Åand also to lower an operational voltage greatly, and operation and fast read/write at one kind of low voltage are possible.