| 发明名称 |
Dry etching method for forming tungsten wiring in a semiconductor device |
| 摘要 |
A dry etching method for forming tungsten wiring having a tapered shape and having a large specific selectivity with respect to a base film is provided. If the bias power density is suitably regulated, and if desired portions of a tungsten thin film are removed using an etching gas having fluorine as its main constituent, then the tungsten wiring having a desired taper angle can be formed. <IMAGE> |
| 申请公布号 |
EP1071124(A2) |
申请公布日期 |
2001.01.24 |
| 申请号 |
EP20000115333 |
申请日期 |
2000.07.14 |
| 申请人 |
SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
SUZAWA, HIDEOMI;ONO, KOJI |
| 分类号 |
H01L21/302;C23F4/00;G02F1/136;H01L21/28;H01L21/3065;H01L21/3205;H01L21/3213;H01L21/768;H01L21/77;H01L23/528;H01L23/532;H01L27/12;H01L29/423;H01L29/49;H01L29/786 |
主分类号 |
H01L21/302 |
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