发明名称 Integrated circuit test structure
摘要 An integrated circuit test structure comprises a potential divider (1, 2) and an array of test circuits. Each test circuit comprises series-connected chains (A1, A2) of integrated circuit connections between test voltage lines (3, 4). Each test circuit also comprises a comparator in the form of a MOSFET (Q1) having a gate connected to the centre point of the chain (A1, A2) and a source connected to the output of the potential divider (1, 2). The drain of the transistor (Q1) is connected to an input (6i) for a bias voltage. <IMAGE>
申请公布号 GB0030346(D0) 申请公布日期 2001.01.24
申请号 GB20000030346 申请日期 2000.12.13
申请人 MITEL SEMICONDUCTOR LIMITED 发明人
分类号 H01L23/544 主分类号 H01L23/544
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