| 摘要 |
There is provided a solid-state image sensor including (a) a photoelectric converter which converts light into electric charges, (b) a transfer section which transfers the electric charges, (c) a floating diffusion layer which converts the transferred electric charges into a voltage, and (d) a multi-staged source follower circuit which amplifies and then outputs the voltage, a distance L2 between a wiring through which drain potential is supplied and a gate electrode in a first-stage MOSFET being longer than the same in second or later MOSFETs. In accordance with the solid-state image sensor, it is possible to reduce a capacity of a gate electrode in a first-stage MOSFET, which ensures high sensitivity even in a solid-state image sensor having small-sized pixels which deal with a small quantity of electric charges.
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