| 发明名称 |
Nitride-type III-V HEMT having an InN 2DEG channel layer |
| 摘要 |
A nitride-type III-V group compound semiconductor device includes a substrate and a layered structure including at least a channel layer using two-dimensional electron gas formed over a substrate, wherein the channel layer contains InN.
|
| 申请公布号 |
US6177685(B1) |
申请公布日期 |
2001.01.23 |
| 申请号 |
US19990235053 |
申请日期 |
1999.01.20 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
TERAGUCHI NOBUAKI;SUZUKI AKIRA |
| 分类号 |
H01L29/812;H01L21/335;H01L21/338;H01L29/20;H01L29/201;H01L29/205;H01L29/778;(IPC1-7):H01L29/06;H01L29/12;H01L29/15 |
主分类号 |
H01L29/812 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
