发明名称 |
Background correction for charge gain and loss |
摘要 |
A method of checking and repairing individual memory bits in a nonvolatile memory device having memory bits arranged in sectors. An unused sector is identified and each memory bit in the sector is checked to identify memory bits having a charge gain or a charge loss. An erase pulse is applied to each memory bit having a charge gain and a programming pulse is applied to each memory bit having a charge loss.
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申请公布号 |
US6178117(B1) |
申请公布日期 |
2001.01.23 |
申请号 |
US20000490352 |
申请日期 |
2000.01.24 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
CLEVELAND LEE |
分类号 |
G11C16/34;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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