发明名称 Method of manufacturing capacitor for mixed-moded circuit device
摘要 A method of manufacturing a capacitor for a mixed-mode circuit device. A substrate having an isolation region is provided. A bottom electrode is formed on the isolation region. A spacer is formed on a sidewall of the bottom electrode. A dielectric layer is formed on the bottom electrode. A conductive layer is formed over the substrate. The conductive layer is patterned to form an upper electrode.
申请公布号 US6177327(B1) 申请公布日期 2001.01.23
申请号 US19990250628 申请日期 1999.02.16
申请人 UNITED SEMICONDUCTOR CORP. 发明人 CHAO YU-FENG
分类号 H01L21/02;H01L27/06;(IPC1-7):H01L21/824 主分类号 H01L21/02
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