发明名称 |
Method of manufacturing capacitor for mixed-moded circuit device |
摘要 |
A method of manufacturing a capacitor for a mixed-mode circuit device. A substrate having an isolation region is provided. A bottom electrode is formed on the isolation region. A spacer is formed on a sidewall of the bottom electrode. A dielectric layer is formed on the bottom electrode. A conductive layer is formed over the substrate. The conductive layer is patterned to form an upper electrode.
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申请公布号 |
US6177327(B1) |
申请公布日期 |
2001.01.23 |
申请号 |
US19990250628 |
申请日期 |
1999.02.16 |
申请人 |
UNITED SEMICONDUCTOR CORP. |
发明人 |
CHAO YU-FENG |
分类号 |
H01L21/02;H01L27/06;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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