发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a reliable semiconductor device and a method for manufacturing the device, which can suppress its deterioration with time while using copper wiring. SOLUTION: A connection part 44 to a connection electrode (pad) 3 made of a copper film on a semiconductor substrate 10 or between the electrode 3 and a bonding wire 43 is arranged so that copper is not exposed onto the surface of the connection part 44. Consequently, there can be obtained a reliable semiconductor device which suppresses its deterioration with time with use of a copper wiring. When an Al wiring is formed on a semiconductor element using a copper wiring 6, an Al pad 40 is formed not immediately above the copper pad 3 but at a position of a passivation insulating film 4 shifted with respect to the copper pad. A stress during bonding is not exerted up to the Cu wiring and copper is not exposed onto the surface thereof. As a result, there can be formed a reliable semiconductor device which prevents deterioration of the copper wiring with time such as oxidation or corrosion.
申请公布号 JP2001015516(A) 申请公布日期 2001.01.19
申请号 JP19990186435 申请日期 1999.06.30
申请人 TOSHIBA CORP 发明人 IIJIMA TADASHI
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L23/20 主分类号 H01L23/52
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