| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device of a wiring structure which can have a high reliability, an excellent flatness and a high manufacturing yield and can be inexpensively manufactured. SOLUTION: The manufacturing method for forming damascene wiring or plug wiring for a semiconductor device has a step of making a wiring groove or hole in an insulating film formed on a substrate and forming a metallic film on the insulating film, and a step of applying a voltage to the substrate in an electrolytic solution with the substrate used as an anode. In the voltage applying step, a surface of the metallic film is oxidized by an anodizing process, and the oxide is removed or the surface of the metallic film is removed by an electrolytic etching process.
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