| 摘要 |
PROBLEM TO BE SOLVED: To securely fill a groove with a conductive material, improve a yield of wiring formation step and reduce a cost by making a distance between side walls regulating a recessed part to be larger as they are far from a semiconductor substrate and filling the recessed part with a conductive layer. SOLUTION: An insulation layer 2 is formed on the main surface 1a of a silicon substrate 1, and another insulation layer 3 is formed thereon. A groove 3a extending in one direction is formed as a recessed part in the insulation layer 3, and it is regulated by a side wall 3c and a distance between the side walls 3c is made larger as they are far from the silicon substrate 1, especially, when they are close to the top surface 3b of the insulation layer 3, the distance therebetween becomes significantly large and a round part 3d forming a curved surface is formed on the side wall 3c near the top surface 3b. A conductive layer 7 is formed as to be filled in the groove 3a. Thus, the improved yield and reduction of cost can be realized in a wiring formation step and a semiconductor device provided with a highly reliable wiring be also obtained.
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