| 摘要 |
PROBLEM TO BE SOLVED: To improve adhesion property between a contact metal layer and an Al layer and to prevent release phenomenon by including Ni with high adhesion strength to both the contact metal layer and Al layer between the contact metal layer and the Al layer. SOLUTION: An N-type epitaxial layer 2 is formed in an N++-type semiconductor substrate 1, a guard ring 3 is formed in the layer 2 by normal selection diffusion method or the like, and further an insulation covering 4 is formed so that one end part of the guard ring 3 can be covered. Then, by a normal photographic process, a window hole is formed at the insulation covering 4. After that, by continuously depositing such a metal 5 as molybdenum, an Ni thin film 11 or an Al layer 10, and a lead out electrode layer 6 being selected appropriately to form a Schottky barrier on the exposed semiconductor substrate surface are formed on the exposed semiconductor substrate surface. In this manner, by including the Ni thin film 11 between a Schottky metal layer 5 and the Al metal layer 10 as a cushion material, adhesion property can be improved and a release phenomenon can be prevented. |
