| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrode structure formed on a P-type group III nitride semiconductor layer, which is stable and has a low resistance, and a high adhesive strength. SOLUTION: An electrode structure on a P-type group III nitride semiconductor layer includes a first, a second, and a third electrode layers, 102, 103, and 104, where the first electrode layer 102 contains at least one kind selected out of a first metal group composed of Ti, Hf, Zr, V, Nb, Ta, Cr, W and Sc, the second electrode layer 103 contains at least one kind selected out of a second metal group composed of Ni, Pd, and Co, and the third electrode layer 104 contains Au. |
