| 摘要 |
PROBLEM TO BE SOLVED: To prevent short-circuiting phenomenon of the metal deposition layer of the contact hole of a package wafer in advance by performing formation at a corner part, where the contact hole of the package wafer comes into contact with the surface of a device wafer and continuously forming the metal deposition layer there. SOLUTION: For coupling and connecting a surface electrode 210 of a device wafer 110 to a metal electrode pattern 22 which is to be formed on the surface of a package wafer 140, patterning operation is made through a metal deposition process for depositing the metal thin film of a conductor, for example a metal thin film 170 made of chromium/gold alloy or the like is deposited inside a contact hole 160 of the package wafer 140, thus forming a smooth round part 230 at the lower portion of the contact hole 160 and continuously forming the metal deposition thin film 170 at the round part 230, where the contact hole 160 comes into contact with the surface electrode 210 of the device wafer 110, thus preventing an electrical short-circuiting phenomenon. |
