| 摘要 |
PROBLEM TO BE SOLVED: To see to it that the VG (gate voltage)-ID (drain current) property does not deteriorate, even if the drain voltage VD is raised in a comb-toothed film transistor. SOLUTION: An interval T1, between the tip of each tooth 7a and 8a of a drain electrode 7 and a source electrode 8 and each coupling part 8b and 7b of the source electrode 8 and the drain electrode 7 opposed to it, is longer than the interval T2 (the length of a channel) between the tooth 7a of the drain electrode 7 and the tooth 8a of the source electrode 8. This can make the concentration of an electric field occurring between the tip of each tooth 7a and 8a of the drain electrode 7a relax, and the source electrode 8 and each coupling part 8b and 7b of the source electrode 8, and the drain electrode 7 opposed to it. As a result, even if the drain voltage VD is raised to, for example, 40 V, the VG-ID property will not deteriorate. |
