发明名称 ELECTRON EMITTING ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To provide an electron element for separating a short-circuit portion speedily and certainly, by dividing the element having many emitters as a plurality of blocks, and electrically separating a short-circuit block by an active element that automatically suppresses current during a short circuit between an emitter and a gate. SOLUTION: A portion sandwiched by two island-like p-type regions 52 forms a so called joint field-effect transistor(JFET), and an electrode 59 forms a short- circuit state between a source electrode and a gate electrode of the JFET. A voltage of a drain equals to a supply voltage and a source voltage during a short circuit between an emitter and a gate is null, so that saturated current flows. During normal operation only a slight part of an emitter current flows as a gate current, so that the source voltage decreases slightly than the supply voltage. The saturated current can be decreased by shortening a gap between the p-type regions 52 and increasing the length in the current flow direction to electrically separate a short-circuit block.</p>
申请公布号 JP2001015010(A) 申请公布日期 2001.01.19
申请号 JP19990186548 申请日期 1999.06.30
申请人 TOSHIBA CORP 发明人 ONO TOMIO;SAKAI TADASHI;CHO TOSHI
分类号 G09G3/10;H01J1/304;(IPC1-7):H01J1/304 主分类号 G09G3/10
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