NONVOLATILE SEMICONDUCTOR MEMORY AND DATA WRITING METHOD

摘要

PROBLEM TO BE SOLVED: To enable data writings of plural times with respect to a memory cell in which data can not be erased by using the same external address as the external address used at the time of writing already stored data. SOLUTION: This nonvolatile semiconductor memory 100 enables access to different data blocks by using the same external address as the external address used at the time of writing already stored data by storing encoded offset address in an address table 92 in the memory cell 101 of a EPROM (erasable programmable ROM), by decoding the encoded offset address with a decoder 103, by generating a real address in the cell 101 while adding the decoded offset address and the external address inputted via external address busses 110 with an arithmetic and logic unit 102 and by performing writings with respect data blocks B0 to B7 while using the real address.