发明名称 |
Method for etching layers on semiconductor substrates |
摘要 |
Process for partially exposing a metal layer on a surface of a semiconductor substrate comprises removing at least a first part of one layer applied to the metal layer by dry etching and a second part by wet etching. Dry etching removes more than 80, preferably more than 90% of the layer. Plasma etching is used in the dry etching step. Immersion, spray or rotation etching is used for the wet etching step. |
申请公布号 |
EP1069604(A2) |
申请公布日期 |
2001.01.17 |
申请号 |
EP20000114756 |
申请日期 |
2000.07.10 |
申请人 |
SEZ SEMICONDUCTOR-EQUIPMENT ZUBEHOER FUER DIE HALBLEITERFERTIGUNG AG;INFINEON TECHNOLOGIES AG |
发明人 |
KRUWINUS, HANS-JUERGEN;DE NIJS, GEERT |
分类号 |
H01L21/302;H01L21/306;H01L21/311;H01L21/3205;H01L21/3213;H01L21/60;H01L23/48;H01L23/485;H01L23/52 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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