发明名称 SPUTTERING TARGET AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target minimal in the generation of particles at the time of forming a metallic thin film by sputtering and excellent in film thickness distribution and recyclability, and its manufacturing method. SOLUTION: The sputtering target is composed of an aluminum alloy and has <=50μm size of intermetallic compound, <=300μm grain size, >=20% crystal orientation index (200), and <=100 ppm oxygen content. This sputtering target can be manufactured by heating an aluminum alloy to a temperature not lower than the solid-liquid coexisting temperature, pouring the resultant molten Al alloy into a metal mold heated to 200-400 deg.C, and then solidifying it under pressurization at >=10 kg/cm2.
申请公布号 JP2001011609(A) 申请公布日期 2001.01.16
申请号 JP19990178379 申请日期 1999.06.24
申请人 HONEYWELL ELECTRONICS JAPAN KK 发明人 YO RIKIGUN;UEDA TADAO
分类号 C23C14/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
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