| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a polyimide film useful for an insula tion film, or the like, for a semiconductor formed on the surface of a substrate by which the film having a target thickness is formed in excellent productivity while reducing the decrease of the thickness of the film by evaporating a spe cific acid anhydride and a diamine in a vacuum atmosphere, and carrying out the deposition polymerization thereof on a substrate. SOLUTION: (A) An acid anhydride and (B) a diamine capable of providing a partially imidized polyamic acid having a photosensitivity by the deposition polymerization are used. The component A is heated to about 170-240 deg.C and the component B is heated to about 140-280 deg.C to evaporate them, and the evaporated components A and B are subjected to the deposition polymerization on a substrate heated to about 80-120 deg.C to provide the objective film. Preferably, a compound of formula I is used as the component A, and a compound of formula II (n groups of R1 to R4 are CH3 and (4-n) groups thereof are H; (n) is 1-4), or the like, (e.g. a compound of formula III) is used as the component B. |
