| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD film forming method for forming a W new creation film of high quality on a WxN film and moreover forming a W film of high quality thereon. SOLUTION: Gaseous SiH4 is sprayed for a prescribed time on the surface of a WxN film of the substrate to be treated from the feeding source thereof, and, after that, the W new creation film is formed by the CVD method. Then, with the W new creation film as the nucleus, by the CVD method, the W film is formed. By feeding only the gaseous SiH4 before the formation of the W new creation film, the W new creation film of high quality can be formed on the WxN film.
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