METHOD FOR FORMING ULTRA FINE CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming ultra fine contact of a semiconductor device is provided to simplify the manufacturing processes and to reduce contact resistance by using a metal silicide. CONSTITUTION: After forming an interlayer dielectric(22) on a silicon substrate(21), a contact hole is formed by selectively etching the interlayer dielectric(22). A titanium silicide(27) is sufficiently filled into the contact hole by a CVD(Chemical Vapor Deposition) using SiH4 and Til4 gases as a source gas and hydrogen or argon gases as a carrier gas. The titanium silicide(27) is then planarized by an etch-back and a CMP(Chemical Mechanical Polishing). An aluminum or a copper is deposited on the entire surface of the resultant structure so as to form a metal film(26).