| 摘要 |
PURPOSE: A method for forming a gate insulating layer using alumina(Al2O3) is provided to prevent that an effective oxide layer thickness increases due to an oxidation of a substrate in O2 plasma processing for removing a carbon inside of Al2O3 gate insulating layer, and improve a leakage current characteristic by a crystallization of Al2O3 gate insulating layer CONSTITUTION: Alumina(Al2O3) layer(4) is deposited on a semiconductor substrate(1). N2/O2 plasma processing is performed about the Alumina(Al2O3) layer. Then, the alumina(Al2O3) layer is thermal-processed in N2O environment. The alumina(Al2O3) layer is deposited by using ALE(atom layer epitaxy) method using Al(CH3) and H2O. N2/O2 plasma processing prevents an oxidation of a semiconductor substrate, and effectively removes a carbon. The thermal processing in the N2O environment is performed to improve a leakage current characteristic through a crystallization of alumina(Al2O3).
|
