| 摘要 |
PURPOSE: A method for manufacturing a copper interconnection of a semiconductor device is provided to improve a barrier characteristic between a lower interconnection pattern or an interlayer dielectric and a copper interconnection, by forming an adhesion layer for nitrification, and by using a nitride layer uniformly formed in a via hole as a barrier layer. CONSTITUTION: An interlayer dielectric(13) is formed on a semiconductor substrate(11) having a lower structure, and exposure and etch processes are performed to form a via hole and a trench. The via hole and trench are cleaned, and an adhesion layer(15) is formed on the entire structure including the via hole and trench. A barrier layer is formed by performing a nitrogen plasma treatment. A copper interconnection layer(16) is formed on the entire structure having the adhesion layer and a barrier layer. The copper interconnection layer, the barrier layer and the adhesion layer on the interlayer dielectric are eliminated to bury the copper interconnection layer only in the via hole and trench.
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