| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to prevent a short of contact holes and easily achieve a processing margin by using a self-aligned contact formation processes. CONSTITUTION: A gate electrode(23) surrounded by a first insulating layer(24) is formed on a silicon substrate(20) having source and drain regions(26,26'). By forming and selectively etching a second insulating layer(27), the surface of the silicon substrate of a contact region is exposed. After forming a first conductive layer(28) on the resultant structure, a sacrificial oxide(29) is formed on the first conductive layer(28). A contact hole is formed by selectively etching the sacrificial oxide(29) using the first conductive layer(28) as an etch stopper. A contact layer(30) is formed by filling a second conductive layer into the contact hole. After removing the sacrificial layer(29), the exposed first conductive layer is removed.
|
