METHOD FOR FORMING CHARGE STORAGE ELECTRODE OF SEMICONDUCTOR DEVICE USING SELECTIVE HSG(HEMISPHERICAL SILICON GRAIN)

摘要

PURPOSE: A method for forming a charge storage electrode using HSG(hemispherical silicon grain) layer is provided to prevent an electric short between charge storage electrodes, and enhance an electric characteristic and a production yield of a semiconductor device, by suppressing an HSG growth on an upper part of a cylinder structure of a charge storage electrode. CONSTITUTION: A contact hole for exposing a semiconductor substrate after penetrating a predetermined interfacial insulating layer(21) is formed. A contact plug(22) is buried in the contact hole. The first sacrificial layer is formed on the total structure. The first sacrificial layer of a charge storage electrode forming area is selectively etched. Amorphous silicon layer(24) is formed along the total structure surface. The second sacrificial layer is formed on the amorphous silicon layer. The second sacrificial layer is recessed to expose the amorphous silicon layer. A plasma processing is performed about the exposed amorphous silicon layer by using a gas having a carbon. The first and second sacrificial layers are removed. A selective hemispherical silicon grain is formed on the exposed amorphous silicon layer.